Gate-all-around transistors
Nanosheet transistors succeeding the FinFET.
Gate-all-around (GAA) nanosheet transistors wrap the gate fully around the channel for better electrostatic control at scaled dimensions. Research addresses channel engineering, contact resistance, and stacked complementary FET (CFET) devices.
Technologies
Gate-all-around (GAA)NanosheetCFET
Devices
MOSFETLogic transistor
Materials
SiliconHigh-κ dielectric
Applications
Advanced logic
Active research directions
- Nanosheet channel engineering
- Contact resistance at scale
- CFET stacking