Wide-bandgap semiconductors
Silicon carbide and gallium nitride for power and RF.
Wide-bandgap materials — silicon carbide (SiC) and gallium nitride (GaN) — outperform silicon for high-voltage, high-frequency, and high-temperature power electronics. Research focuses on wafer quality, device reliability, and cost.
Technologies
Silicon carbide (SiC)Gallium nitride (GaN)Power devices
Devices
Power MOSFETDiodeHEMT
Materials
SiCGaNSilicon
Applications
Automotive / EVPower electronicsRF
Active research directions
- SiC wafer defect density & cost
- GaN reliability
- Vertical GaN devices