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DopingMVP

Carrier concentration

Find majority and minority carrier concentrations from the dopant level and the intrinsic carrier concentration.

Inputs

Educational, non-degenerate model

Assumes complete dopant ionization and non-degenerate (Boltzmann) statistics, with a single dopant type.

Silicon at ~300 K is about 1×10¹⁰ cm⁻³.

Result

Enter values and calculate to see the result.

Interpretation

Choose a dopant type and enter the dopant and intrinsic concentrations.

Formula

Carrier concentrations
n·p = nᵢ² , majority ≈ Nd/2 + √((Nd/2)² + nᵢ²)

Charge neutrality combined with mass action.

Variables

SymbolVariableUnit
nElectron concentrationm⁻³ (shown as cm⁻³)
pHole concentrationm⁻³ (shown as cm⁻³)
Nd / NaDonor / acceptor concentrationm⁻³
nᵢIntrinsic carrier concentrationm⁻³

Assumptions & validity

Worked example

n-type, Nd = 1×10¹⁶ cm⁻³, nᵢ = 1×10¹⁰ cm⁻³.

n ≈ 1×10¹⁶ cm⁻³; p = nᵢ²/n ≈ 1×10⁴ cm⁻³