Ingot
Growing a single crystal.
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At a glance
Inputs
- Electronic-grade polysilicon
- Seed crystal
- Optional dopant (B or P)
Outputs
- Single-crystal silicon ingot of defined orientation and resistivity
What is it?
Growth of a large single-crystal silicon boule (ingot) from molten polysilicon, most commonly by the Czochralski (CZ) method.
Why is it needed?
Transistors need a perfect, periodic crystal lattice with a known orientation. A single crystal — not the polycrystalline feedstock — is what gives predictable, uniform electrical properties across the wafer.
How does it work?
Polysilicon is melted in a quartz crucible. A small seed crystal of known orientation is dipped into the melt and slowly pulled upward while rotating.
As it is withdrawn, silicon solidifies onto the seed, replicating its crystal orientation and growing a cylindrical single-crystal ingot. Dopant can be added to the melt to set the base resistivity.
Critical parameters
- Pull rate
- Rotation speed
- Melt temperature
- Crystal orientation (e.g. ⟨100⟩)
Typical defects
- Dislocations
- Oxygen-induced defects
- Resistivity non-uniformity along the boule
Equipment involved
- Czochralski crystal puller
Materials involved
- Quartz crucible
- Argon ambient
- Dopant
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